Sublimation of the Si(111) surface in ultrahigh vacuum

被引：61

作者：

Homma, Y

Hibino, H

Ogino, T

Aizawa, N

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN

[2] TOKYO GAKUGEI UNIV, KOGANEI, TOKYO 184, JAPAN

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.55.R10237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated sublimation of a Si(111) surface using a 70-mu m-wide (111) plane created at the bottom of a crater during ultrahigh-vacuum heating. Step spacing on the plane is determined by nucleation of macrovacancies in the center of the plane while steps move in a step-flow manner. The step spacing is related to the adatom diffusion length and decreases with increasing temperature of up to 1190 degrees C. Around 1200 degrees C, the spacing shows a transitionlike behavior and increases to 2.5 times the value at 1190 degrees C. Step flow is maintained above the step-spacing transition.

引用

页码：10237 / 10240

页数：4

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