ANNEALING BEHAVIOR OF (7X7) DOMAIN BOUNDARIES ON SI(111) OBSERVED BY SECONDARY-ELECTRON IMAGING

被引：11

作者：

AIZAWA, N

HOMMA, Y

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN

[2] TOKYO GAKUGEI UNIV, KOGANEI, TOKYO 184, JAPAN

来源：

SURFACE SCIENCE | 1995年 / 340卷 / 1-2期

关键词：

LOW INDEX SINGLE CRYSTAL SURFACES; SCANNING ELECTRON MICROSCOPY (SEM); SECONDARY ELECTRON EMISSION; SILICON; SURFACE STRUCTURE;

D O I：

10.1016/0039-6028(95)00687-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The rearrangement of (7 X 7) domain boundaries on Si(111) surfaces during annealing has been investigated by using a secondary electron imaging technique: scanning electron surface microscopy. The shape of the domain boundaries changes during annealing for several minutes at 8 degrees C below the (7 X 7)-(1 X 1) transition temperature in order to form stabilized domain structures. The stabilized boundaries are in the [110] directions, reflecting the structures of the (7 X 7) unit. This is the result of minimizing the energy of the boundaries, which consisted of (1 x 1) structures fluctuating with the size of the (7 X 7) units at the temperature.

引用

收藏

页码：101 / 108

页数：8

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