CLASSIFICATION AND STRUCTURE ANALYSES OF DOMAIN BOUNDARIES ON SI(111)

被引：26

作者：

ITOH, M

TANAKA, H

WATANABE, Y

UDAGAWA, M

SUMITA, I

机构：

[1] Matsushita Research Institute Tokyo, Inc., Higashimita, Tama-ku

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.47.2216

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A general scheme is proposed for the classification of 7 X 7-domain boundaries on Si(111). By applying this scheme to the data obtained by scanning tunneling microscopy, general proper-ties of atomic structures on Si(111) are derived. In particular, the possibility of the dimer-row-driven reconstruction mechanisms is ruled out, and hence another possibility is discussed.

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页码：2216 / 2227

页数：12

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