共 20 条
- [2] BAUERLE F, 1972, J APPL PHYS, V43, P3917
- [3] DIMER-ADATOM-STACKING-FAULT (DAS) AND NON-DAS (111) SEMICONDUCTOR SURFACES - A COMPARISON OF GE(111)-C (2X8) TO SI(111)-(2X2), SI(111)-(5X5), SI(111)-(7X7), AND SI(111)-(9X9) WITH SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1989, 39 (03): : 1633 - 1647
- [4] NEW RECONSTRUCTIONS ON SILICON (111) SURFACES [J]. PHYSICAL REVIEW LETTERS, 1986, 57 (08) : 1020 - 1023
- [6] FEENSTRA R, UNPUB J VAC SCI TECH
- [7] SCANNING TUNNELING MICROSCOPY STUDIES OF SI(111)-2X1 SURFACES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1315 - 1319
- [8] FORMATION OF THE 5X5 RECONSTRUCTION ON CLEAVED SI(111) SURFACES STUDIED BY SCANNING TUNNELING MICROSCOPY [J]. PHYSICAL REVIEW B, 1990, 42 (08): : 5391 - 5394
- [9] GARNI B, 1990, SURF SCI, V235, P324
- [10] HANEMAN D, 1989, SURF SCI, V224, pL965, DOI 10.1016/0039-6028(89)90891-1