DC-RESISTIVE-HEATING-INDUCED STEP BUNCHING ON VICINAL SI (111)

被引：124

作者：

HOMMA, Y ^{[1
]}

MCCLELLAND, RJ ^{[1
]}

HIBINO, H ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, BASIC RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 12期

关键词：

STEP BUNCHING; DC-RESISTIVE-HEATING EFFECT; VICINAL SI SURFACE; UHV-SEM;

D O I：

10.1143/JJAP.29.L2254

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Step bunching on a 1-degree-misoriented Si(111) surface induced by DC resistive heating is observed by ultrahigh-vacuum scanning electron microscopy. Step band regions of the DC-heating-induced bunching surface break up into finer step bands (subbands) and (111) facets below the (7 X 7) <--> (1 X 1) phase transition temperature (T(c) = 830-degrees-C). The temperature dependence of bunching-inducing current direction on the vicinal surface is the same as that of nearly flat (111) surfaces previously reported, except that bunching is induced for the opposite current direction to nearly flat (111) surfaces below T(c).

引用

页码：L2254 / L2256

页数：3

共 13 条

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