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STRUCTURAL MODEL FOR THE NEGATIVE ELECTRON-AFFINITY SURFACE OF O/CS/SI(001)2X1
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UHV-REM STUDY OF CHANGES IN THE STEP STRUCTURES ON CLEAN (100) SILICON SURFACES BY ANNEALING
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KAHATA H, 1989, IN PRESS SURF SCI
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BIATOMIC LAYER-HIGH STEPS ON SI(001)2X1 SURFACE
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1987, 26 (04)
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MONOLAYER AND BILAYER HIGH STEPS ON SI(001)2X1 VICINAL SURFACE
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