Ultra-large-scale step-free terraces formed at the bottom of craters on vicinal Si(III) surfaces

被引:43
作者
Homma, Y
Aizawa, N
Ogino, T
机构
[1] TOKYO GAKUGEI UNIV, KOGANEI, TOKYO 184, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA 24301, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1996年 / 35卷 / 2B期
关键词
silicon; step; planarization; step-free terrace; scanning electron microscopy;
D O I
10.1143/JJAP.35.L241
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the self-controlled planarization of Si(111) surfaces at the bottom of craters. A (111) plane with a step spacing as large as 10 micrometers can be obtained at the bottom of a crater by heating a misoriented Si(111) substrate with craters at around 1200 degrees C in ultrahigh vacuum. The (111) plane grows preferentially by filling adatoms in the crater until the plane surface reaches one of the top edges of the crater. The resulting surface has an extremely small miscut angle (<0.002 degrees), making it useful for fundamental research into crystal growth as well as for device fabrication.
引用
收藏
页码:L241 / L243
页数:3
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