Evaluation of fermi level pinning in low, midgap and high workfunction metal gate electrodes on ALD and MOCVD HfO2 under high temperature exposure

被引：16

作者：

Jha, R ^{[1
]}

Lee, JH ^{[1
]}

Chen, B ^{[1
]}

Lazar, H ^{[1
]}

Gurganus, J ^{[1
]}

Biswas, N ^{[1
]}

Majhi, P ^{[1
]}

Brown, G ^{[1
]}

Misra, V ^{[1
]}

机构：

[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27695 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419137

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The workfunction behavior and stability of several candidate metal gate electrodes on HfO2 was carefully examined and correlated with processing parameters such as anneal temperatures and oxygen exposures. Transition metals and their nitrides, binary metal alloys and refractory metals were studied on MOCVD HfO2 dielectrics of varying thicknesses. Binary low work function Mo-Ta alloys were also investigated on HfO2.

引用

页码：295 / 298

页数：4

共 6 条

[1]

Hauser JR, 1998, AIP CONF PROC, V449, P235

[2]

HOBBS C, VLSI TECHN 2003 DIG, P9

[3] A capacitance-based methodology for work function extraction of metals on high-κ [J].

Jha, R ;

Gurganos, J ;

Kim, YH ;

Choi, R ;

Lee, J ;

Misra, V .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (06) :420-423

[4]

SAMAVEDAM SB, 2003, EL DEV M 2003 IEDM 0, P1311

[5]

YEO YC, 2002, IEEE ELECT DEVICE LE, V23

[6] Current transport in metal/hafnium oxide/silicon structure [J].

Zhu, WJ ;

Ma, TP ;

Tamagawa, T ;

Kim, J ;

Di, Y .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (02) :97-99

← 1 →