High-rate deposition of Si:H films using a flow plasma-chemical method with electron beam activation

被引：17

作者：

Sharafutdinov, RG

Skrynnikov, AV

Parakhnevich, AV

Ayupov, BM

Badalian, AM

Polyakov, OV

Baklanov, MR

Mogilnikov, KP

Biryukov, SA

机构：

[1] RUSSIAN ACAD SCI,INST INORGAN CHEM,SIBERIAN BRANCH,NOVOSIBIRSK 630090,RUSSIA

[2] RUSSIAN ACAD SCI,INST SEMICOND PHYS,NOVOSIBIRSK 630090,RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.361444

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-rate a-Si:H film deposition using the new plasma-chemical gas jet method with electron beam activation has been developed. The films were characterized by ellipsometry, IR-spectrometry, and electrophysical measurements. Comparison of the film characteristics with those obtained by Hichikawa et al., J. Appl. Phys. 73, 4227 (1993), in the usual planar technology has demonstrated satisfactory film quality with a growth rate of films an order of magnitude greater than the rates in a planar reactor. (C) 1996 American Institute of Physics.

引用

页码：7274 / 7277

页数：4

共 12 条

[1]

Askenas H, 1966, P 4 INT S NEW YORK, V2, P84

[2] GAS-JET DEPOSITION OF THIN-FILMS [J].