PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITED THIN-FILMS FOR MICROELECTRONIC APPLICATIONS

被引:44
作者
NGUYEN, SV
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 05期
关键词
D O I
10.1116/1.583476
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:1159 / 1167
页数:9
相关论文
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  • [1] ADAMS AC, 1983, SOLID STATE TECHNOL, V26, P135
  • [2] CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE
    ADAMS, AC
    ALEXANDER, FB
    CAPIO, CD
    SMITH, TE
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1545 - 1551
  • [3] AKIK M, 1980, J APPL PHYS, V51, P5055
  • [4] AKIMOTO K, 1981, APPL PHYS LETT, V39, P445
  • [5] A COMPARISON BETWEEN SILICON-NITRIDE FILMS MADE BY PCVD OF N2-SIH4/AR AND N2-SIH4/HE
    ALLAERT, K
    VANCALSTER, A
    LOOS, H
    LEQUESNE, A
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1763 - 1766
  • [6] SPUTTERING OF DIELECTRICS BY HIGH-FREQUENCY FIELDS
    ANDERSON, GS
    MAYER, WN
    WEHNER, GK
    [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) : 2991 - &
  • [7] ATL LL, 1963, J ELECTROCHEM SOC, V110, P456
  • [8] ATL LL, 1964, J ELECTROCHEM SOC, V111, P120
  • [9] AVIGAL I, 1983, SOLID STATE TECHNOL, V26, P217
  • [10] BACHMANN P, 1985, 7TH P INT S PLASM CH, V1, P7