A COMPARISON BETWEEN SILICON-NITRIDE FILMS MADE BY PCVD OF N2-SIH4/AR AND N2-SIH4/HE

被引:30
作者
ALLAERT, K [1 ]
VANCALSTER, A [1 ]
LOOS, H [1 ]
LEQUESNE, A [1 ]
机构
[1] BELL TEL MFG CO,B-9000 GHENT,BELGIUM
关键词
D O I
10.1149/1.2114207
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
8
引用
收藏
页码:1763 / 1766
页数:4
相关论文
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