A COMPARISON BETWEEN SILICON-NITRIDE FILMS MADE BY PCVD OF N2-SIH4/AR AND N2-SIH4/HE

被引：30

作者：

ALLAERT, K ^{[1
]}

VANCALSTER, A ^{[1
]}

LOOS, H ^{[1
]}

LEQUESNE, A ^{[1
]}

机构：

[1] BELL TEL MFG CO,B-9000 GHENT,BELGIUM

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1985年 / 132卷 / 07期

关键词：

D O I：

10.1149/1.2114207

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1763 / 1766

页数：4

共 8 条

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VALKENBURG, WGJN ;

HABRAKEN, FHPM ;

TAMMINGA, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) :2419-2423

[3] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE [J].

DUN, H ;

PAN, P ;

WHITE, FR ;

DOUSE, RW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) :1555-1563

[4]

LANFORD WA, 1978, J APPL PHYS, V49, P2476

[5] ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION [J].

MAEDA, M ;

ARITA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6852-6856

[6]

NGUYEN VS, 1983, MAY EL SOC M SAN FRA

[7]

SHERMAN A, 1984, THIN SOLID FILMS, V29, P140

[8]

VANDEVEN EPG, 1981, SOLID STATE TECHNOL, V24, P169

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