共 28 条
CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE
被引:173
作者:

ADAMS, AC
论文数: 0 引用数: 0
h-index: 0

ALEXANDER, FB
论文数: 0 引用数: 0
h-index: 0

CAPIO, CD
论文数: 0 引用数: 0
h-index: 0

SMITH, TE
论文数: 0 引用数: 0
h-index: 0
机构:
关键词:
D O I:
10.1149/1.2127680
中图分类号:
O646 [电化学、电解、磁化学];
学科分类号:
081704 ;
摘要:
引用
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页码:1545 / 1551
页数:7
相关论文
共 28 条
[1]
THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS
[J].
ADAMS, AC
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SMITH, TE
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CHANG, CC
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980, 127 (08)
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ADAMS, AC
论文数: 0 引用数: 0
h-index: 0

SMITH, TE
论文数: 0 引用数: 0
h-index: 0

CHANG, CC
论文数: 0 引用数: 0
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[2]
EVALUATION OF THE PRISM COUPLER FOR MEASURING THE THICKNESS AND REFRACTIVE-INDEX OF DIELECTRIC FILMS ON SILICON SUBSTRATES
[J].
ADAMS, AC
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SCHINKE, DP
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CAPIO, CD
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979, 126 (09)
:1539-1543

ADAMS, AC
论文数: 0 引用数: 0
h-index: 0
机构: Bell Laboratories, Murray Hill

SCHINKE, DP
论文数: 0 引用数: 0
h-index: 0
机构: Bell Laboratories, Murray Hill

CAPIO, CD
论文数: 0 引用数: 0
h-index: 0
机构: Bell Laboratories, Murray Hill
[3]
PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE
[J].
ADAMS, AC
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CAPIO, CD
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981, 128 (02)
:423-429

ADAMS, AC
论文数: 0 引用数: 0
h-index: 0

CAPIO, CD
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[4]
DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE
[J].
ADAMS, AC
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CAPIO, CD
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979, 126 (06)
:1042-1046

ADAMS, AC
论文数: 0 引用数: 0
h-index: 0
机构: Bell Laboratories, Murray Hill

CAPIO, CD
论文数: 0 引用数: 0
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机构: Bell Laboratories, Murray Hill
[5]
HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS
[J].
BECKMANN, KH
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HARRICK, NJ
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971, 118 (04)
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BECKMANN, KH
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HARRICK, NJ
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[6]
INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY
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BECKMANN, KH
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SURFACE SCIENCE,
1965, 3 (04)
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BECKMANN, KH
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AN INFRARED STUDY OF THE WATER-SILICA GEL SYSTEM
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BENESI, HA
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BENESI, HA
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JONES, AC
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ANOMALOUS ETCHING PHENOMENON OF RF-SPUTTERED SIO2-FILMS
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JAPANESE JOURNAL OF APPLIED PHYSICS,
1979, 18 (10)
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HARA, K
论文数: 0 引用数: 0
h-index: 0
机构:
TOYOTA CENT RES & DEV LABS INC,TEMPAKU KU,NAGOYA,AICHI 468,JAPAN TOYOTA CENT RES & DEV LABS INC,TEMPAKU KU,NAGOYA,AICHI 468,JAPAN

SUZUKI, Y
论文数: 0 引用数: 0
h-index: 0
机构:
TOYOTA CENT RES & DEV LABS INC,TEMPAKU KU,NAGOYA,AICHI 468,JAPAN TOYOTA CENT RES & DEV LABS INC,TEMPAKU KU,NAGOYA,AICHI 468,JAPAN

TAGA, Y
论文数: 0 引用数: 0
h-index: 0
机构:
TOYOTA CENT RES & DEV LABS INC,TEMPAKU KU,NAGOYA,AICHI 468,JAPAN TOYOTA CENT RES & DEV LABS INC,TEMPAKU KU,NAGOYA,AICHI 468,JAPAN
[9]
DEPOSITION OF PLASMA SILICON-OXIDE THIN-FILMS IN A PRODUCTION PLANAR REACTOR
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HOLLAHAN, JR
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JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979, 126 (06)
:930-934

HOLLAHAN, JR
论文数: 0 引用数: 0
h-index: 0
机构:
APPL MAT INC,SANTA CLARA,CA 95051 APPL MAT INC,SANTA CLARA,CA 95051
[10]
GLOW DISCHARGE FORMATION OF SILICON OXIDE AND DEPOSITION OF SILICON OXIDE THIN FILM CAPACITORS BY GLOW DISCHARGE TECHNIQUES
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ING, SW
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ING, SW
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DAVERN, W
论文数: 0 引用数: 0
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