CHARACTERIZATION OF PLASMA-DEPOSITED SILICON DIOXIDE

被引:173
作者
ADAMS, AC
ALEXANDER, FB
CAPIO, CD
SMITH, TE
机构
关键词
D O I
10.1149/1.2127680
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1545 / 1551
页数:7
相关论文
共 28 条
[1]   THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS [J].
ADAMS, AC ;
SMITH, TE ;
CHANG, CC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) :1787-1794
[2]   EVALUATION OF THE PRISM COUPLER FOR MEASURING THE THICKNESS AND REFRACTIVE-INDEX OF DIELECTRIC FILMS ON SILICON SUBSTRATES [J].
ADAMS, AC ;
SCHINKE, DP ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1539-1543
[3]   PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE [J].
ADAMS, AC ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) :423-429
[4]   DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE [J].
ADAMS, AC ;
CAPIO, CD .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :1042-1046
[5]   HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J].
BECKMANN, KH ;
HARRICK, NJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :614-&
[7]   AN INFRARED STUDY OF THE WATER-SILICA GEL SYSTEM [J].
BENESI, HA ;
JONES, AC .
JOURNAL OF PHYSICAL CHEMISTRY, 1959, 63 (02) :179-182
[8]   ANOMALOUS ETCHING PHENOMENON OF RF-SPUTTERED SIO2-FILMS [J].
HARA, K ;
SUZUKI, Y ;
TAGA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) :2027-2028
[9]   DEPOSITION OF PLASMA SILICON-OXIDE THIN-FILMS IN A PRODUCTION PLANAR REACTOR [J].
HOLLAHAN, JR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) :930-934
[10]   GLOW DISCHARGE FORMATION OF SILICON OXIDE AND DEPOSITION OF SILICON OXIDE THIN FILM CAPACITORS BY GLOW DISCHARGE TECHNIQUES [J].
ING, SW ;
DAVERN, W .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (03) :284-&