DEPOSITION OF PLASMA SILICON-OXIDE THIN-FILMS IN A PRODUCTION PLANAR REACTOR

Plasma silicon oxide has been deposited from reaction of silane and nitrous oxide in a planar, radial flow reactor which is capable of supporting 28 3 in. silicon wafers. Deposition took place optimally at 300 W power at an excitation frequency of 50 kHz, 0.3 Torr pressure, and flows of nitrous oxide and silane of 900 and 60 cm3 sec-1, respectively. High deposition rates were observed, up to 1500 Å/min, at 900W discharge power. The films were characterized by electron spectroscopy surface analysis (ESCA) and measurements of some electrical and mechanical properties. In addition, phosphorus doping of the oxide was achieved by addition of PH3 to the plasma of N2O and SiH4. © 1979, The Electrochemical Society, Inc. All rights reserved.