Weakly localized transport in modulation-doped GaN/AlGaN heterostructures

被引：5

作者：

Buyanov, AV ^{[1
]}

Sandberg, JA

Sernelius, BE

Holtz, PO

Bergman, JP

Monemar, B

Amano, H

Akasaki, I

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 468, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

heterostructures; disorder defects; localization; transport;

D O I：

10.1016/S0022-0248(98)00283-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Experimental data from Hall effect and magnetoresistance in the temperature interval 2-250 K for modulation-doped AlGaN/GaN heterostructures indicate that two parallel conducting channels are present. Weak localization is present at the lowest temperatures. The transport parameters are understood in terms of the presence of strong potential fluctuations at the AlGaN/GaN interface. (C) 1998 Published by Elsevier Science B.V. All rights reserved.

引用

页码：758 / 762

页数：5

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