MAGNETOCONDUCTANCE DUE TO PARALLEL MAGNETIC-FIELDS IN SILICON INVERSION-LAYERS

被引：43

作者：

MENSZ, PM

WHEELER, RG

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.35.2844

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：2844 / 2853

页数：10

相关论文

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