Spectroscopic ellipsometric study of the size evolution of Ge islands grown on Si (100)

被引：11

作者：

Palange, E

Ragni, L

Di Gaspare, L

Capellini, G

Evangelisti, F

机构：

[1] Univ Rome La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[2] Ist Nazl Fis Mat, I-00185 Rome, Italy

[3] Univ Roma TRE, Dipartimento Fis Edoardo Amaldi, I-00146 Rome, Italy

[4] Univ Roma TRE, Ist Nazl Fis Mat, I-00146 Rome, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 11期

关键词：

D O I：

10.1063/1.367441

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this article we discuss the use of spectroscopic ellipsometry for an in situ and real time probe of three-dimensional self-organized Ge island growth on Si (100) surfaces. We will show that atomic force microscopy and x-ray photoemission spectroscopy can be combined with spectroscopic ellipsometry to give information on the size and shape evolution of the Ge islands as well as on the amount of Ge deposited on the Si surface. (C) 1998 American Institute of Physics. [S0021-8979(98)02511-0].

引用

收藏

页码：5840 / 5844

页数：5

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