Oxidation of Sn overlayers and the structure and stability of Sn oxide films on Pd(111)

被引:42
作者
Lee, AF [1 ]
Lambert, RM [1 ]
机构
[1] Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England
来源
PHYSICAL REVIEW B | 1998年 / 58卷 / 07期
关键词
D O I
10.1103/PhysRevB.58.4156
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The oxidation at 300 K of ultrathin Sn films has been studied by Auger and x-ray photoelectron spectroscopy. The process divides into two regimes: submonolayer Sn coverages are stable towards low (<10(5) L) oxygen exposures, becoming fully oxidized to stoichiometric SnO at higher exposures (similar to 10(11) L). Thicker Sn deposits oxidize more rapidly, and analysis of the Sn Auger parameter and substrate surface core-level shift indicates that oxidation is accompanied by relatively little change in the initial state charge density of the Sn atoms. This reflects strong preexisting Sn to Pd charge transfer and the low dimensionality of the oxidized Sn overlayers. Thermal stability of these films increases with thickness and they decompose by evolution of gaseous oxygen accompanied by Pd/Sn surface alloy formation. The strong Pd-Sn chemical bond exerts a controlling influence on both overlayer oxidation and oxide decomposition processes within the Sn/Pd(111) system.
引用
收藏
页码:4156 / 4165
页数:10
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