Synthesis and characterization of soluble indolo[3,2-b]carbazole derivatives for organic field-effect transistors

被引:64
作者
Boudreault, Pierre-Luc T. [1 ,2 ]
Virkar, Ajay A. [2 ]
Bao, Zhenan [2 ]
Leclerc, Mario [1 ]
机构
[1] Univ Laval, Dept Chim, Canada Res Chair Electroact & Photoact Polymers, Quebec City, PQ G1K 7P4, Canada
[2] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
基金
美国国家科学基金会; 加拿大自然科学与工程研究理事会;
关键词
Organic thin film transistors OTFTs; Indolo[3,2-b]carbazole derivatives; Solution processing; XRD; THIN-FILM TRANSISTORS; HIGH-MOBILITY; HIGH-PERFORMANCE; CHARGE-TRANSPORT; PENTACENE; SEMICONDUCTOR; DEPOSITION; MORPHOLOGY; POLYMERS; POLY(2,7-CARBAZOLE)S;
D O I
10.1016/j.orgel.2010.07.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The synthesis and characterization of new soluble materials based on the indolo[3,2-b]carbazole (IC) framework is presented. These new molecules are particularly suitable for p-channel organic field-effect transistors (OFETs) because of the high level of crystallinity usually found in IC derivatives. To obtain soluble materials, the synthesis of new 2- or 3-bromoindolo[3,2-b]carbazole backbone was performed which allowed the synthesis of molecule bearing the IC moieties on both ends. Either Suzuki cross-coupling or Horner-Emmons reaction were used as the final step. Thin films of these new materials, along with 3,9-diphenyl-5,11-dioctylindolo[3,2-b]carbazole (3POIND), a material previously reported, were obtained by using different processing techniques. Polarized optical microscopy (POM) and X-ray diffraction (XRD) experiments on these solution-processed films showed high crystallinity. Transistors fabricated with these thin films gave a hole mobility as high as 0.06 cm(2) V (1) s (1) with drop-cast films and 0.12 cm(2) V (1) s (1) when the films were processed with the shearing technique. (C) 2010 Published by Elsevier B.V.
引用
收藏
页码:1649 / 1659
页数:11
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