Ultra low-k porous silicon dioxide films from a plasma process

被引：11

作者：

Han, QY ^{[1
]}

Chen, W ^{[1
]}

Waldfried, C ^{[1
]}

Escorcia, O ^{[1
]}

Sbrockey, NM ^{[1
]}

Bridgewater, TJ ^{[1
]}

Moyer, ES ^{[1
]}

Berry, I ^{[1
]}

机构：

[1] Axcelis Technol Inc, Rockville, MD 20855 USA

来源：

PROCEEDINGS OF THE IEEE 2001 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2001年

关键词：

D O I：

10.1109/IITC.2001.930050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra low dielectric constant porous silicon dioxide films were obtained through a plasma curing process. The process developed was based on a hydrogen silsesquioxane (HSQ) spin-on process with induction of porosity. The dielectric constants of plasma cured films are in a range of 2.0 - 2.2. The Young's modulus values of the porous silicon dioxide films are between 5.7 and 9.0 GPa. The plasma cured porous films demonstrate the characteristics of porous silicon oxide. Furthermore, post plasma treatments have been developed to curb moisture adsorption in the films. The advantages of the plasma curing process are lower temperature, shorter processing time, and higher mechanical strength of the film than the thermal curing process.

引用

页码：171 / 173

页数：3

共 7 条

[1] EFFECT OF POROSITY ON INFRARED-ABSORPTION SPECTRA OF SILICON DIOXIDE [J].