Characterization and integration of porous extra low-k (XLK) dielectrics

被引：28

作者：

Jin, CM ^{[1
]}

Wetzel, J ^{[1
]}

机构：

[1] SEMATECH, Austin, TX 78741 USA

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854294

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Porous XLK dielectric films have been characterized and integrated into one level metal Cu damascene test structures. The material shows reduced dielectric constant as well as lower modulus compared with dense HSQ. Initial one level metal Cu/XLK damascene integration studies demonstrate the feasibility and issues associated with the use of porous low-k materials. Parametric test data show good capacitance and leakage current distributions.

引用

页码：99 / 101

页数：3

共 7 条

[1] THERMAL-CONDUCTIVITY OF ALPHA-SIH THIN-FILMS [J].