n-Type Transition Metal Oxide as a Hole Extraction Layer in PbS Quantum Dot Solar Cells

被引：251

作者：

Gao, Jianbo ^{[1
,2
]}

Perkins, Craig L. ^{[1
]}

Luther, Joseph M. ^{[1
]}

Hanna, Mark C. ^{[1
]}

Chen, Hsiang-Yu ^{[1
]}

Semonin, Octavi E. ^{[1
,3
]}

Nozik, Arthur J. ^{[1
,3
]}

Ellingson, Randy J. ^{[2
]}

Beard, Matthew C. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Univ Toledo, Dept Phys & Astron, Wright Ctr Photovolta Innovat & Commercializat, Toledo, OH 43606 USA

[3] Univ Colorado, Dept Chem, Boulder, CO 80309 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 08期

关键词：

Transition metal oxide; hole extraction layer; quantum dot; solar cell; band bending; gap states;

D O I：

10.1021/nl2015729

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The n-type transition metal oxides (TMO) consisting of molybdenum oxide (MoOx) and vanadium oxide (V2Ox) are used as an efficient hole extraction layer (HEL) in heterojunction ZnO/PbS quantum dot solar cells (QDSC). A 4.4% NREL-certified device based on the MoOx HEL is reported with Al as the back contact material, representing a more than 65% efficiency improvement compared with the case of Au contacting the PbS quantum dot (QD) layer directly. We find the acting mechanism of the hole extraction layer to be a dipole formed at the MoOx and PbS interface enhancing band bending to allow efficient hole extraction from the valence band of the PbS layer by MoOx. The carrier transport to the metal anode is likely enhanced through shallow gap states in the MoOx layer.

引用

收藏

页码：3263 / 3266

页数：4

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