Role of air exposure in the improvement of injection efficiency of transition metal oxide/organic contact

被引：40

作者：

Cheung, C. H. ^{[1
,2
]}

Song, W. J. ^{[3
]}

So, S. K. ^{[1
,2
]}

机构：

[1] Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong, Peoples R China

[2] Hong Kong Baptist Univ, Ctr Adv Luminescence Mat, Kowloon Tong, Hong Kong, Peoples R China

[3] Chinese Acad Sci, Devis Funct Mat & Nano Devices, Ningbo Inst Mat Technol & Engn, Ningbo, Peoples R China

来源：

ORGANIC ELECTRONICS | 2010年 / 11卷 / 01期

关键词：

Transition metal oxides; Charge injection; Organic semiconductor; Injection efficiency; ORGANIC ELECTROLUMINESCENT DEVICES; ELECTRICAL-PROPERTIES; TRANSPORT; MOO3; INTERFACES; DIODES; FILMS; LAYER;

D O I：

10.1016/j.orgel.2009.10.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Oxygen or air exposure to transition metal oxides (TMOs) was demonstrated to be essential in improving the hole injection (HI) efficiency at the contact formed by TMOs and small organic hole transporter. Current-voltage (J-V) and dark-injection space-charge-limited current (DI-SCLC) techniques were used to cross-examine the TMO/organic contacts. The hole transporter under investigation was N,N'-diphenyl-N,N'-bis(1-naphthyl)(1,1'biphenyl)-4,4'diamine (NPB). The improvement was attributed to the reduction in the energy barrier at TMO/NPB interface, which was a consequence of the work function enhancement of TMO by the oxidation of oxygen in air. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：89 / 94

页数：6

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