Advances in the growth and characterization of Ge quantum dots and islands

被引：8

作者：

Baribeau, JM

Rowell, NL

Lockwood, DJ

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Natl Res Council Canada, Inst Natl Measurement Stand, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF MATERIALS RESEARCH | 2005年 / 20卷 / 12期

关键词：

BAND-GAP PHOTOLUMINESCENCE; STRANSKI-KRASTANOV GROWTH; SELF-ASSEMBLED ISLANDS; X-RAY-DIFFRACTION; SIGE ISLANDS; OPTICAL-PROPERTIES; DISLOCATION NETWORK; SI1-X-YGEXCY ALLOYS; GE/SI(001) ISLANDS; SHAPE TRANSITION;

D O I：

10.1557/JMR.2005.0405

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We review recent advances in the growth of Si1-xGex islands and Ge dots on (001) Si. We first discuss the evolution of the island morphology with Si1-xGex coverage and the effect of growth parameters or post-growth annealing on the shape of the islands and dots. We outline some of the structural and optical properties of Si1-xGex islands and assess progress in the determination of their composition and strain distribution. Finally, we discuss various approaches currently being investigated to engineer Si1-xGex quantum dots and in particular to control their size, density, and spatial distribution. For example, we show how C pre-deposition on Si (001) can influence the nucleation and growth of Ge islands.

引用

页码：3278 / 3293

页数：16

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