MOLECULAR-BEAM EPITAXY GROWTH OF GE ON (100)SI

[1] GROWTH AND CHARACTERIZATION OF SI1-XGEX AND GE EPILAYERS ON (100) SI [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (12) : 5738 - 5746

[2] X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIALLY GROWN SI/SI1-XGEX STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 105 - 107

[3] HETEROEPITAXY OF GE ON (100) SI SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1898 - 1902

[4] BARIBEAU JM, 1986, HETEROEPITAXY SILICO, V2

[5] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[6] THE GROWTH OF NOVEL SILICON MATERIALS [J]. PHYSICS TODAY, 1986, 39 (10) : 36 - 42

[7] BIEGELSEN DK, 1983, PHYS REV B, V27, P5126

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE-MISMATCHED IN0.77GA0.23AS ON INP [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1229 - 1232

[9] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[10] GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 69 - 77

[1] GROWTH AND CHARACTERIZATION OF SI1-XGEX AND GE EPILAYERS ON (100) SI [J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (12) : 5738 - 5746

[2] X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIALLY GROWN SI/SI1-XGEX STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 105 - 107

[3] HETEROEPITAXY OF GE ON (100) SI SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1898 - 1902

[4] BARIBEAU JM, 1986, HETEROEPITAXY SILICO, V2

[5] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[6] THE GROWTH OF NOVEL SILICON MATERIALS [J]. PHYSICS TODAY, 1986, 39 (10) : 36 - 42

[7] BIEGELSEN DK, 1983, PHYS REV B, V27, P5126

[8] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE-MISMATCHED IN0.77GA0.23AS ON INP [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1229 - 1232

[9] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[10] GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 69 - 77