GROWTH AND CHARACTERIZATION OF SI1-XGEX AND GE EPILAYERS ON (100) SI

[1] Baribeau J.-M., 1987, Heteroepitaxy on Silicon II. Symposium, P175

[2] HETEROEPITAXY OF GE ON (100) SI SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1898 - 1902

[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[4] THE GROWTH OF NOVEL SILICON MATERIALS [J]. PHYSICS TODAY, 1986, 39 (10) : 36 - 42

[5] BRENNAN R, 1984, SOLID STATE TECHNOL, V27, P125

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE-MISMATCHED IN0.77GA0.23AS ON INP [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1229 - 1232

[7] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[8] Chu W. K., 1978, BACKSCATTERING SPECT

[9] GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 69 - 77

[10] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161

[1] Baribeau J.-M., 1987, Heteroepitaxy on Silicon II. Symposium, P175

[2] HETEROEPITAXY OF GE ON (100) SI SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1898 - 1902

[3] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[4] THE GROWTH OF NOVEL SILICON MATERIALS [J]. PHYSICS TODAY, 1986, 39 (10) : 36 - 42

[5] BRENNAN R, 1984, SOLID STATE TECHNOL, V27, P125

[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE-MISMATCHED IN0.77GA0.23AS ON INP [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1229 - 1232

[7] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 815 - 817

[8] Chu W. K., 1978, BACKSCATTERING SPECT

[9] GROWTH AND CHARACTERIZATION OF GAAS FILMS DEPOSITED ON GE/SI COMPOSITE SUBSTRATES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (01) : 69 - 77

[10] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J]. APPLIED PHYSICS LETTERS, 1980, 36 (02) : 158 - 161