MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE-MISMATCHED IN0.77GA0.23AS ON INP

[1] INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 446 - 448

[2] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819

[3] TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.65 MUM FROM INGAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2591 - 2592

[4] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 37 - 66

[5] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325

[6] LUSCHER PE, 1977, SOLID STATE TECHNOL, V20, P43

[7] USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS [J]. THIN SOLID FILMS, 1976, 33 (02) : 253 - 266

[8] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125

[9] ALMOST PERFECT EPITAXIAL MULTILAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 989 - 991

[10] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) : 635 - 644

[1] INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE [J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 446 - 448

[2] SATURATION VELOCITY DETERMINATION FOR IN0.53GA0.47AS FIELD-EFFECT TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 817 - 819

[3] TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.65 MUM FROM INGAAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2591 - 2592

[4] METALLURGICAL AND ELECTROLUMINESCENCE CHARACTERISTICS OF VAPOR-PHASE AND LIQUID-PHASE EPITAXIAL JUNCTION STRUCTURES OF INXGA1-XAS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (01) : 37 - 66

[5] EPITAXIAL STRUCTURES WITH ALTERNATE ATOMIC-LAYER COMPOSITION MODULATION [J]. APPLIED PHYSICS LETTERS, 1976, 29 (06) : 323 - 325

[6] LUSCHER PE, 1977, SOLID STATE TECHNOL, V20, P43

[7] USE OF MISFIT STRAIN TO REMOVE DISLOCATIONS FROM EPITAXIAL THIN-FILMS [J]. THIN SOLID FILMS, 1976, 33 (02) : 253 - 266

[8] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125

[9] ALMOST PERFECT EPITAXIAL MULTILAYERS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 989 - 991

[10] BANDGAP AND LATTICE-CONSTANT OF GAINASP AS A FUNCTION OF ALLOY COMPOSITION [J]. JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (03) : 635 - 644