TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.65 MUM FROM INGAAS

被引：14

作者：

ESCHER, JS

GREGORY, PE

HYDER, SB

SANKARAN, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 04期

关键词：

D O I：

10.1063/1.325077

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2591 / 2592

页数：2

共 9 条

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ANTYPAS, GA ;

EDGECUMBE, J .

APPLIED PHYSICS LETTERS, 1975, 26 (07) :371-372

[2] TRANSFERRED ELECTRON PHOTOEMISSION FROM INP [J].

BELL, RL ;

JAMES, LW ;

MOON, RL .

APPLIED PHYSICS LETTERS, 1974, 25 (11) :645-646

[3]

BELL RL, 1973, NEGATIVE ELECTRON AF

[4] TRANSFERRED-ELECTRON PHOTOEMISSION TO 1.4 MU-M [J].

ESCHER, JS ;

SANKARAN, R .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :87-88

[5] LIQUID-PHASE-EPITAXIAL GROWTH OF LATTICE-MATCHED IN0.53GA0.47AS ON (100)-ORIENTED INP [J].

HYDER, SB ;

ANTYPAS, GA ;

ESCHER, JS ;

GREGORY, PE .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :551-553

[6] CRACK FORMATION IN INP-GAXIN1-XAS-INP DOUBLE-HETEROSTRUCTURE FABRICATION [J].

NAGAI, H ;

NOGUCHI, Y .

APPLIED PHYSICS LETTERS, 1976, 29 (11) :740-741

[7] GROWTH AND CHARACTERIZATION OF INGAASP-INP LATTICE-MATCHED HETEROJUNCTIONS [J].

SANKARAN, R ;

ANTYPAS, GA ;

MOON, RL ;

ESCHER, JS ;

JAMES, LW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04) :932-937

[8] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAAS ON INP [J].

SANKARAN, R ;

MOON, RL ;

ANTYPAS, GA .

JOURNAL OF CRYSTAL GROWTH, 1976, 33 (02) :271-280

[9]

TAKEDA Y, 1976, J APPL PHYS, V47, P5404

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