HETEROEPITAXY OF GE ON (100) SI SUBSTRATES

被引：29

作者：

BARIBEAU, JM

JACKMAN, TE

MAIGNE, P

HOUGHTON, DC

DENHOFF, MW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.574481

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

收藏

页码：1898 / 1902

页数：5

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共 27 条

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES
ABSTREITER, G
BRUGGER, H
WOLF, T
JORKE, H
HERZOG, HJ
[J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444
[2] BARIBEAU JM, IN PRESS
[3] PSEUDOMORPHIC GROWTH OF GEXSI1-X ON SILICON BY MOLECULAR-BEAM EPITAXY
BEAN, JC
SHENG, TT
FELDMAN, LC
FIORY, AT
LYNCH, RT
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 102 - 104
[4] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
BEAN, JC
FELDMAN, LC
FIORY, AT
NAKAHARA, S
ROBINSON, IK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440
[5] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS
BEAN, JC
[J]. SCIENCE, 1985, 230 (4722) : 127 - 131
[6] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LATTICE-MISMATCHED IN0.77GA0.23AS ON INP
CHAI, YG
CHOW, R
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1229 - 1232
[7] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES
CHOI, HK
TSAUR, BY
METZE, GM
TURNER, GW
FAN, JCC
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) : 207 - 208
[8] Chu W. K., 1978, BACKSCATTERING SPECT
[9] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR
DAEMBKES, H
HERZOG, HJ
JORKE, H
KIBBEL, H
KASPAR, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 633 - 638
[10] FELDMAN LC, 1982, MATERIALS ANAL ION C