THE GROWTH OF NOVEL SILICON MATERIALS

[1] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[2] BEAN JC, 1985, 1ST P INT S SIL MOL

[3] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862

[4] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NISI2 ON SI [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 853 - 855

[5] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153

[6] KASPER E, SILICON MOL BEAM EPI

[7] TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 762 - 764

[8] TEMKIN H, APPL PHYS LETT

[9] SCHOTTKY-BARRIER FORMATION AT SINGLE-CRYSTAL METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (06) : 461 - 464

[10] TUNG RT, J VAC SCI TECHNOL

[1] STRAINED-LAYER EPITAXY OF GERMANIUM-SILICON ALLOYS [J]. SCIENCE, 1985, 230 (4722) : 127 - 131

[2] BEAN JC, 1985, 1ST P INT S SIL MOL

[3] ATOMIC-STRUCTURE OF THE NISI2/(111)SI INTERFACE [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 46 (05): : 849 - 862

[4] SCHOTTKY-BARRIER HEIGHT MEASUREMENTS OF EPITAXIAL NISI2 ON SI [J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 853 - 855

[5] TRANSISTOR ACTION IN SI/COSI2/SI HETEROSTRUCTURES [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 151 - 153

[6] KASPER E, SILICON MOL BEAM EPI

[7] TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 762 - 764

[8] TEMKIN H, APPL PHYS LETT

[9] SCHOTTKY-BARRIER FORMATION AT SINGLE-CRYSTAL METAL-SEMICONDUCTOR INTERFACES [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (06) : 461 - 464

[10] TUNG RT, J VAC SCI TECHNOL