TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES

[1] ATALLA MM, 1962, JUL IRE AIEE SOL STA

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] CROWELL CR, 1967, PHYSICS THIN FILMS, V4

[4] DAVITAYA FA, 1984, INT C MOL BEAM EPITA

[5] GEPPERT DV, 1962, P IRE, V50, P1527

[6] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 913 - 915

[7] ELECTRICAL-PROPERTIES OF THIN CO2SI, COSI, AND COSI2 LAYERS GROWN ON EVAPORATED SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 95 - 105

[8] ROSE A, 1960, RCA6A INT REP

[9] TRANSIENT-CURRENT STUDY OF FIELD-ASSISTED EMISSION FROM SHALLOW LEVELS IN SILICON [J]. PHYSICAL REVIEW B, 1984, 29 (03): : 1135 - 1147

[10] ROSENCHER E, 1984, INT C MOL BEAM EPITA

[1] ATALLA MM, 1962, JUL IRE AIEE SOL STA

[2] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646

[3] CROWELL CR, 1967, PHYSICS THIN FILMS, V4

[4] DAVITAYA FA, 1984, INT C MOL BEAM EPITA

[5] GEPPERT DV, 1962, P IRE, V50, P1527

[6] ELECTRICAL TRANSPORT-PROPERTIES OF COSI2 AND NISI2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 913 - 915

[7] ELECTRICAL-PROPERTIES OF THIN CO2SI, COSI, AND COSI2 LAYERS GROWN ON EVAPORATED SILICON [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (01) : 95 - 105

[8] ROSE A, 1960, RCA6A INT REP

[9] TRANSIENT-CURRENT STUDY OF FIELD-ASSISTED EMISSION FROM SHALLOW LEVELS IN SILICON [J]. PHYSICAL REVIEW B, 1984, 29 (03): : 1135 - 1147

[10] ROSENCHER E, 1984, INT C MOL BEAM EPITA