ELECTRICAL-PROPERTIES OF THIN CO2SI, COSI, AND COSI2 LAYERS GROWN ON EVAPORATED SILICON

被引：45

作者：

LIEN, CD ^{[1
]}

FINETTI, M ^{[1
]}

NICOLET, MA ^{[1
]}

LAU, SS ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093

来源：

关键词：

D O I：

10.1007/BF02659838

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：95 / 105

页数：11

共 10 条

[1] CHOPRA KL, 1969, THIN FILM PHENOMENA, P345
[2] ELECTRICAL CHARACTERISTICS OF THIN NI2SI, NISI, AND NISI2 LAYERS GROWN ON SILICON
COLGAN, EG
MAENPAA, M
FINETTI, M
NICOLET, MA
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 413 - 422
[3] GUIDOTH R, 1978, EVALUATION MHD MATER
[4] LIEN CD, UNPUB
[5] MOHAMMADI F, 1981, SOLID STATE TECHNOL, V24, P65
[6] REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS
MURARKA, SP
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04): : 775 - 792
[7] NICOLET MA, 1983, VLSI ELECTRONICS MIC, V6, pCH6
[8] Samsonov G.V., 1980, HDB REFRACTORY COMPO
[9] SHAFFER PT, 1964, HDB HIGH TEMPERATURE, V1
[10] ELECTRICAL CHARACTERISTICS OF PALLADIUM SILICIDE
WITTMER, M
SMITH, DL
LEW, PW
NICOLET, MA
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 573 - &