TRANSIENT-CURRENT STUDY OF FIELD-ASSISTED EMISSION FROM SHALLOW LEVELS IN SILICON

被引：54

作者：

ROSENCHER, E

MOSSER, V

VINCENT, G

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.29.1135

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：1135 / 1147

页数：13

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