RATE OF FIELD-IONIZATION FROM S-STATES WITH A QUANTUM DEFECT

被引：15

作者：

CHAUDHURI, S ^{[1
]}

COON, DD ^{[1
]}

DERKITS, GE ^{[1
]}

BANAVAR, JR ^{[1
]}

机构：

[1] UNIV CHICAGO,JAMES FRANCK INST,CHICAGO,IL 60637

来源：

PHYSICAL REVIEW A | 1981年 / 23卷 / 04期

关键词：

D O I：

10.1103/PhysRevA.23.1657

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

收藏

页码：1657 / 1661

页数：5

相关论文

共 18 条

[1] DONOR BINDING-ENERGIES IN MULTIVALLEY SEMICONDUCTORS
ALTARELLI, M
HSU, WY
SABATINI, RA
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1977, 10 (21): : L605 - L609
[2] LOW-TEMPERATURE FIELD-IONIZATION OF LOCALIZED IMPURITY LEVELS IN SEMICONDUCTORS
BANAVAR, JR
COON, DD
DERKITS, GE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 94 - 96
[3] NEW CHARGE-STORAGE EFFECT IN SILICON P-I-N-DIODES AT CRYOGENIC TEMPERATURES
BANAVAR, JR
COON, DD
DERKITS, G
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (08) : 576 - 579
[4] ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS
BASSANI, F
IADONISI, G
PREZIOSI, B
[J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) : 1099 - 1210
[5] EXCITED ATOMIC AND MOLECULAR-STATES IN STRONG ELECTROMAGNETIC-FIELDS
BAYFIELD, JE
[J]. PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1979, 51 (06): : 317 - 391
[6] QUANTUM-MECHANICAL ESTIMATES OF THE SPEED OF FIELD-IONIZATION OF SHALLOW IMPURITY LEVELS
CHAUDHURI, S
COON, DD
DERKITS, GE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 111 - 113
[7] FRACTIONAL-CHARGE IMPURITIES IN SEMICONDUCTORS
CHAUDHURI, S
COON, DD
DERKITS, GE
[J]. PHYSICAL REVIEW LETTERS, 1980, 45 (17) : 1374 - 1378
[8] DEMKOV YN, 1965, SOV PHYS JETP-USSR, V20, P614
[9] ERDELYI A, 1953, HIGHER TRANSCENDENTA, P257
[10] HARRELL E, UNPUBLISHED