X-RAY DOUBLE-CRYSTAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIALLY GROWN SI/SI1-XGEX STRAINED-LAYER SUPERLATTICES

被引：33

作者：

BARIBEAU, JM

机构：

来源：

关键词：

D O I：

10.1063/1.99064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：105 / 107

页数：3

共 11 条

[1] HETEROEPITAXY OF GE ON (100) SI SUBSTRATES
BARIBEAU, JM
JACKMAN, TE
MAIGNE, P
HOUGHTON, DC
DENHOFF, MW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1898 - 1902
[2] THE GROWTH OF NOVEL SILICON MATERIALS
BEAN, JC
[J]. PHYSICS TODAY, 1986, 39 (10) : 36 - 42
[3] BEAN JC, 1984, J VAC SCI TECHNOL A, V2, P2441
[4] THE N-CHANNEL SIGE/SI MODULATION-DOPED FIELD-EFFECT TRANSISTOR
DAEMBKES, H
HERZOG, HJ
JORKE, H
KIBBEL, H
KASPAR, E
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 633 - 638
[5] JAMES RW, 1963, SOLID STATE PHYS, V15, P169
[6] NEW INFRARED DETECTOR ON A SILICON CHIP
LURYI, S
KASTALSKY, A
BEAN, JC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1135 - 1139
[7] PEARSALL TP, 1985, 1ST P INT S SIL MOL, P366
[8] PHYSICS AND APPLICATIONS OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES
PEOPLE, R
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1696 - 1710
[9] GROWTH-CONDITIONS AND CHARACTERIZATION OF INGAAS GAAS STRAINED LAYERS SUPERLATTICES
QUILLEC, M
GOLDSTEIN, L
LEROUX, G
BURGEAT, J
PRIMOT, J
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 2904 - 2909
[10] X-RAY ROCKING CURVE ANALYSIS OF SUPERLATTICES
SPERIOSU, VS
VREELAND, T
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1591 - 1600