PHYSICS AND APPLICATIONS OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] BEAN JC, 1985, 1ST P INT S SIL MOL, P337

[4] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[5] CAPASSO F, 1985, SEMICONDUCT SEMIMET, V22, P1

[6] EFFECTIVE MASS FILTERING - GIANT QUANTUM AMPLIFICATION OF THE PHOTOCURRENT IN A SEMICONDUCTOR SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 420 - 422

[7] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1138 - 1140

[8] DAEMBKES H, UNPUB IEEE T ELECTRO

[9] EFRON U, 1984, SPATIAL LIGHT MODULA

[10] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065

[1] STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (22) : 2441 - 2444

[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 436 - 440

[3] BEAN JC, 1985, 1ST P INT S SIL MOL, P337

[4] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[5] CAPASSO F, 1985, SEMICONDUCT SEMIMET, V22, P1

[6] EFFECTIVE MASS FILTERING - GIANT QUANTUM AMPLIFICATION OF THE PHOTOCURRENT IN A SEMICONDUCTOR SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1985, 47 (04) : 420 - 422

[7] RAMAN-SCATTERING FROM GEXSI1-X/SI STRAINED-LAYER SUPERLATTICES [J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1138 - 1140

[8] DAEMBKES H, UNPUB IEEE T ELECTRO

[9] EFRON U, 1984, SPATIAL LIGHT MODULA

[10] THERMAL RELAXATION OF METASTABLE STRAINED-LAYER GEXSI1-X/SI EPITAXY [J]. PHYSICAL REVIEW B, 1985, 31 (06): : 4063 - 4065