Subpicosecond photoconductivity of In0.53Ga0.47As: Intervalley scattering rates observed via THz spectroscopy

被引：40

作者：

Ralph, SE ^{[1
]}

Chen, Y ^{[1
]}

Woodall, J ^{[1
]}

McInturff, D ^{[1
]}

机构：

[1] PURDUE UNIV,DEPT ELECT & COMP ENGN,LAFAYETTE,IN 47907

来源：

PHYSICAL REVIEW B | 1996年 / 54卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.54.5568

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the transient photoconductivity of hot carriers in undoped bulklike In0.53Ga0.47As observed via time-resolved terahertz far-infrared spectroscopy. For very dilute photoexcitation densities of <1X10(15) cm(-3) and an initial excess carrier energy of 630 meV, we find that electrons have an effective intervalley L-->Gamma return time of 3.1 ps as measured via the increased electrical conductivity associated with Gamma electrons. In contrast, a total conductivity risetime of similar to 0.5 ps is observed for electrons with initial excess energy insufficient to cause intervalley scattering. The observed frequency dependent conductivity is analyzed via the Drude theory, allowing the determination of the temporal dynamics of the mobility at dilute excitation densities of similar to 1x10(14) cm(-3).

引用

页码：5568 / 5573

页数：6

共 18 条

[11] TRAP-ENHANCED ELECTRIC-FIELDS IN SEMI-INSULATORS - THE ROLE OF ELECTRICAL AND OPTICAL CARRIER INJECTION [J].