High Photocurrent in Silicon Photoanodes Catalyzed by Iron Oxide Thin Films for Water Oxidation

被引：69

作者：

Jun, Kimin ^{[1
,2
]}

Lee, Yun Seog ^{[2
]}

Buonassisi, Tonio ^{[2
]}

Jacobson, Joseph M. ^{[1
,2
]}

机构：

[1] MIT, Media Lab, Ctr Bits & Atoms, Cambridge, MA 02139 USA

[2] MIT, Dept Mech Engn, Cambridge, MA 02139 USA

来源：

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION | 2012年 / 51卷 / 02期

关键词：

electrochemistry; photoelectrodes; semiconductors; silicon; water oxidation; PHOTOELECTROCHEMICAL HYDROGEN-PRODUCTION; OXYGEN-EVOLVING CATALYST; ELECTRODES; SI; PHOTOELECTROLYSIS;

D O I：

10.1002/anie.201104367

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon splits: The application of silicon to water oxidation is limited due to unfavorable interface properties. However, these can be circumvented by using a high-performance silicon photoanode with a catalytically active iron oxide thin film (see picture). This approach results in photocurrents as high as 17mA cm -2 under 1sun and zero overpotential conditions. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：423 / 427

页数：5

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