Fabrication, assembly, and testing of RF MEMS capacitive switches using flexible printed circuit technology

被引:29
作者
Ramadoss, R [1 ]
Lee, S
Lee, YC
Bright, VM
Gupta, KC
机构
[1] Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA
[2] Univ Colorado, Dept Elect & Comp Engn, Boulder, CO 80309 USA
[3] Univ Colorado, Dept Engn Mech, Boulder, CO 80309 USA
来源
IEEE TRANSACTIONS ON ADVANCED PACKAGING | 2003年 / 26卷 / 03期
关键词
CPW shunt switch; flexible printed circuits; Kapton-E polyimide film; printed circuit MEMS; RF MEMS switches;
D O I
10.1109/TADVP.2003.817968
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A novel approach for cost effective fabrication, assembly, and packaging of radio-frequency microelectromechanical systems (RF MEMS) capacitive switches using flexible circuit processing techniques is reported. The key feature of this approach is the use of most commonly used flexible circuit film, Kapton-E polyimide film, as the movable switch membrane. The physical dimensions of these switches are in the mesoscale range. For example, electrode area and gap height of a capacitive shunt switch on coplanar waveguide are2 x 1 mm(2) and 43 mum, respectively. Pull-down voltage is in the range of 90-100 V. In the ON state (up-position), the insertion loss is less than 0.3-0.4 dB up to 30 GHz. In OFF state (down-position), the isolation value is about 15 dB at 12 GHz and increases to 36 dB at 30 GHz. These switches are uniquely suitable for batch integration with printed circuits and antennas on laminate substrates.
引用
收藏
页码:248 / 254
页数:7
相关论文
共 21 条
[1]  
Barker NS, 1998, IEEE T MICROW THEORY, V46, P1881, DOI 10.1109/22.734503
[2]   RF MEMS-based tunable filters [J].
Brank, J ;
Yao, ZMJ ;
Eberly, M ;
Malczewski, A ;
Varian, K ;
Goldsmith, CL .
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2001, 11 (05) :276-284
[3]  
*COV INC, COV WAR VER 2001 3
[4]   Micromachined electro-mechanically tunable capacitors and their applications to RF IC's [J].
Dec, A ;
Suyama, K .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (12) :2587-2596
[5]  
Goldsmith CL, 1999, INT J RF MICROW C E, V9, P362, DOI 10.1002/(SICI)1099-047X(199907)9:4<362::AID-MMCE7>3.0.CO
[6]  
2-H
[7]   Performance of low-loss RF MEMS capacitive switches [J].
Goldsmith, CL ;
Yao, ZM ;
Eshelman, S ;
Denniston, D .
IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1998, 8 (08) :269-271
[8]  
Hoivik N, 2001, IEEE MTT-S, P2115, DOI 10.1109/MWSYM.2001.967331
[9]  
Hyman D, 1999, INT J RF MICROW C E, V9, P348, DOI 10.1002/(SICI)1099-047X(199907)9:4<348::AID-MMCE6>3.0.CO
[10]  
2-K