Giant positive magnetoresistance in arrays of semi-metallic bismuth nanowires

被引：13

作者：

Liu, K ^{[1
]}

Chien, CL

Searson, PC

Kui, YZ

机构：

[1] Johns Hopkins Univ, Dept Phys & Astron, Baltimore, MD 21218 USA

[2] Johns Hopkins Univ, Dept Mat Sci & Engn, Baltimore, MD 21218 USA

[3] Univ Marne La Vallee, Dept Phys, F-93166 Noisy Le Grand, France

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1998年 / 34卷 / 04期

关键词：

electrodeposition; positive magnetoresistance; semi-metallic nanowires;

D O I：

10.1109/20.706369

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Arrays of semi-metallic Bi nanowires have been successfully fabricated by electrodeposition. A very large positive magnetoresistance of 300% at low temperatures and 70% at room temperature with quasi-linear field dependence has been observed. These features are highly desirable for sensing applications.

引用

页码：1093 / 1095

页数：3

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