MAGNETORESISTIVITY OF BISMUTH-FILMS IN MAGNETIC-FIELDS TO 19-TESLA

被引：2

作者：

LERNER, CM ^{[1
]}

MA, YP ^{[1
]}

BROOKS, JS ^{[1
]}

MESSERVEY, R ^{[1
]}

TEDROW, P ^{[1
]}

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1991年 / 52卷 / 06期

关键词：

D O I：

10.1007/BF00323655

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The longitudinal and transverse magnetoresistance to fields of 19 Tesla and 4.2 K has been measured for bismuth films ranging in thickness from 0.01 to 2-mu-m. We have observed a pronounced maximum in the longitudinal magnetoresistance which is thickness dependent. We compare these results with classical size effect theories for the longitudinal magnetoresistance in terms of magnetic-field-dependent electron scattering at grain and film boundaries. Measurements of the longitudinal magnetoresistance to 38 Tesla show a quenching of the classical size effect in the high field limit. This result strongly supports our analysis.

引用

页码：433 / 437

页数：5

共 19 条

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