An under-gate triode structure field emission display with carbon nanotube emitters

被引：64

作者：

Choi, YS

Kang, JH

Park, YJ

Choi, WB

Lee, CJ

Jo, SH

Lee, CG

You, JH

Jung, JE

Lee, NS

Kim, JM

机构：

[1] Samsung Adv Inst Technol, Natl Creat Res Initiat Ctr electron Emiss Source, Suwon 440600, South Korea

[2] Samsung Adv Inst Technol, Display Lab, Suwon 440600, South Korea

[3] Samsung SDI, CRD, Paldal Gu, Suwon 442391, South Korea

来源：

关键词：

carbon nanotube emitters; field emission displays; triode structure; under-gate structure;

D O I：

10.1016/S0925-9635(01)00399-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new triode structure for field emission displays based on carbon nanotube emitters is demonstrated. In this structure, gate electrodes are located underneath the cathode electrodes with an in-between insulating layer, a so-called under-gate type triode structure. Although the gate is on the opposite side of the anode with respect to the cathode electrodes, modulation of electron emission from the carbon nanotube emitters by the gate voltage is confirmed. The simple structure and fabrication process may lead to practical applications for the under-gate triode type structure. (C) 2001 Published by Elsevier Science B.V.

引用

页码：1705 / 1708

页数：4