Development of gas sensors based on tungsten oxide nanowires in metal/SiO2/metal structure and their sensing responses to NO2

被引:9
作者
Ko, Rong-Ming [1 ]
Wang, Shui-Jinn [1 ]
Wen, Zhi-Fu [1 ]
Lin, Jun-Ku [1 ]
Fan, Ga-Hong [1 ]
Shu, Wen-I [1 ]
Liou, Bor-Wen
机构
[1] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan
关键词
gas sensor; tungsten carbide; tungsten oxide nanowires; nitrogen dioxide; sensitivity; delectability;
D O I
10.1143/JJAP.47.3272
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, the fabrication of gas sensors utilizing self-synthesized tungsten oxide nanowires (TONWs) and their response to NO2 are reported. The gas sensor is based on a sputter-deposited WCx/SiO2/WCx triple-layer structure with the periphery of the SiO2 layer etched chemically. Self-synthesized TONWs with crystalline W18O49(010) were grown by simple thermal annealing in nitrogen ambient, which linked, in parallel, the upper and lower WC, electrodes for gas sensing. The TONW-based sensors increased in resistance in NO2 because the surface of TONWs comprised oxygen adsorbates and the adjacent space charge region was electron-depleted. The amount of enlargement in resistance increased with increasing temperature. To improve the detectability of the parallel-connected TONW-based sensor, a connection of several individual sensors in series was proposed to enlarge the number of TONWs for gas sensing. For the 8-series-connected sensor, a sensitivity as high as 9.3, a response time as low as about 9 s, and a detectability as low as 2 ppm for NO2 were obtained.
引用
收藏
页码:3272 / 3276
页数:5
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