Hydrogenation of polysilicon thin-film transistor in a planar inductive H2/Ar discharge

被引：28

作者：

Yeh, CF ^{[1
]}

Chen, TJ

Liu, C

Gudmundsson, JT

Lieberman, MA

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

[3] Univ Iceland, Inst Sci, IS-107 Reykjavik, Iceland

[4] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1999年 / 20卷 / 05期

关键词：

hydrogenation; inductively coupled plasma; thin-film transistor;

D O I：

10.1109/55.761021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A planar inductive discharge is used to hydrogenate polysilicon thin-film transistors (poly-Si TFT's). Experimental results indicate that inductive discharges operate at higher plasma densities, thereby capable of shortening the hydrogenation time. In addition, to promote the ionization of hydrogen, Ar gas is also introduced to H-2 plasma during hydrogenation. Furthermore, me discuss the mechanism of Ar enhanced hydrogenation and the characteristics of H-2/Ar mixed plasma. Moreover, the posthydrogenation anneal is utilized to further enhance passivation efficiency and improve the reliability of poly-Si TFT's.

引用

页码：223 / 225

页数：3

共 15 条

[1] MASS SPECTROGRAPHIC IDENTIFICATION OF ION OBSERVED IN HYDROGEN MOBILITY EXPERIMENTS [J].