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Growth and Morphology of Sputtered Aluminum Thin Films on P3HT Surfaces
被引:46
作者:
Kaune, Gunar
[1
,2
]
Metwalli, Ezzeldin
[1
]
Meier, Robert
[1
]
Koerstgens, Volker
[1
]
Schlage, Kai
[3
]
Couet, Sebastien
[3
,4
,5
]
Roehlsberger, Ralf
[3
]
Roth, Stephan V.
[3
]
Mueller-Buschbaum, Peter
[1
]
机构:
[1] Tech Univ Munich, Lehrstuhl Funkt Mat, Phys Dept E13, D-85747 Garching, Germany
[2] Univ Halle Wittenberg, D-06120 Halle, Germany
[3] DESY, HASYLAB, D-22603 Hamburg, Germany
[4] Katholieke Univ Leuven, Inst Voor Kern & Stralingsfys, B-3001 Louvain, Belgium
[5] Katholieke Univ Leuven, INPAC, B-3001 Louvain, Belgium
关键词:
aluminum;
P3HT;
solar cell;
GISAXS;
sputtering;
METAL-POLYMER INTERFACES;
X-RAY-SCATTERING;
SOLAR-CELLS;
ELECTRONIC-STRUCTURE;
COPOLYMER FILMS;
BILAYER FILMS;
ADHESION;
AL;
CHEMISTRY;
PHOTOLUMINESCENCE;
D O I:
10.1021/am101195m
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Growth and morphology of an aluminum (Al) contact on a poly(3-hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer. This growth type results in a homogeneous film without voids and is explained by the strong chemical interaction between Al and P3HT, which suppresses the formation of three-dimensional duster structures. A corresponding three stage growth derived. X-ray reflectivity shows the penetration of Al atoms into the intermixing layer at the Al:P3HT interface. model (surface bonding, agglomeration, and layer growth) is P3HT film during deposition and the presence of a 2 nm thick intermixing layer at the Al:P3HT interface.
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页码:1055 / 1062
页数:8
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