Growth and Morphology of Sputtered Aluminum Thin Films on P3HT Surfaces

被引:46
作者
Kaune, Gunar [1 ,2 ]
Metwalli, Ezzeldin [1 ]
Meier, Robert [1 ]
Koerstgens, Volker [1 ]
Schlage, Kai [3 ]
Couet, Sebastien [3 ,4 ,5 ]
Roehlsberger, Ralf [3 ]
Roth, Stephan V. [3 ]
Mueller-Buschbaum, Peter [1 ]
机构
[1] Tech Univ Munich, Lehrstuhl Funkt Mat, Phys Dept E13, D-85747 Garching, Germany
[2] Univ Halle Wittenberg, D-06120 Halle, Germany
[3] DESY, HASYLAB, D-22603 Hamburg, Germany
[4] Katholieke Univ Leuven, Inst Voor Kern & Stralingsfys, B-3001 Louvain, Belgium
[5] Katholieke Univ Leuven, INPAC, B-3001 Louvain, Belgium
关键词
aluminum; P3HT; solar cell; GISAXS; sputtering; METAL-POLYMER INTERFACES; X-RAY-SCATTERING; SOLAR-CELLS; ELECTRONIC-STRUCTURE; COPOLYMER FILMS; BILAYER FILMS; ADHESION; AL; CHEMISTRY; PHOTOLUMINESCENCE;
D O I
10.1021/am101195m
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Growth and morphology of an aluminum (Al) contact on a poly(3-hexylthiophene) (P3HT) thin film are investigated with X-ray methods and related to the interactions at the Al:P3HT interface. Grazing incidence small-angle scattering (GISAXS) is applied in situ during Al sputter deposition to monitor the growth of the layer. A growth mode is found, in which the polymer surface is wetted and rapidly covered with a continuous layer. This growth type results in a homogeneous film without voids and is explained by the strong chemical interaction between Al and P3HT, which suppresses the formation of three-dimensional duster structures. A corresponding three stage growth derived. X-ray reflectivity shows the penetration of Al atoms into the intermixing layer at the Al:P3HT interface. model (surface bonding, agglomeration, and layer growth) is P3HT film during deposition and the presence of a 2 nm thick intermixing layer at the Al:P3HT interface.
引用
收藏
页码:1055 / 1062
页数:8
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