Strong charge fluctuations in the single-electron box:: A quantum Monte Carlo analysis

被引：45

作者：

Herrero, CP

Schön, G

Zaikin, AD

机构：

[1] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsruhe, Germany

[2] CSIC, Inst Ciencia Mat, Madrid 28049, Spain

[3] PN Lebedev Phys Inst, Moscow 117924, Russia

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.59.5728

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study strong electron tunneling in the single-electron box, a small metallic island coupled to an electrode by a tunnel junction, by means of quantum Monte Carlo simulations. We obtain results, at arbitrary tunneling strength, for the free energy of this system and the average charge on the island as a function of an external bias voltage. in much of the parameter range an extrapolation to the ground state is possible. Our results for the effective charging energy for strong tunneling are compared to earlier-in part controversial-theoretical predictions and Monte Carlo simulations. [S0163-1829(99)03108-2].

引用

页码：5728 / 5737

页数：10