A numerical study of scaling issues for Schottky-Barrier carbon nanotube transistors

被引:218
作者
Guo, J [1 ]
Datta, S [1 ]
Lundstrom, M [1 ]
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
carbon nanotube transistors; nanotechnology; quantum effects; Schottky barriers (SBs); semiconductor device modeling;
D O I
10.1109/TED.2003.821883
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We performed a comprehensive scaling study of Schottky-barrier (SB) carbon nanotube transistors using self-consistent, atomistic scale simulations. We restrict our attention to SB carbon nanotube field-effect transistors (FETs) whose metal source-drain is attached to an intrinsic carbon nanotube channel. Ambipolar conduction is found to be an important factor that must be carefully considered in device design, especially when the gate oxide is thin. The channel length scaling limit imposed by source-drain tunneling is found to be between 5 nm and 10 nm, depending on the off-current specification. Using a large diameter tube increases the on-current, but it also increases the leakage current. Our study of gate dielectric scaling shows that the charge on the nanotube can play an important role above threshold.
引用
收藏
页码:172 / 177
页数:6
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