Carbon nanotubes as Schottky barrier transistors

被引：974

作者：

Heinze, S ^{[1
]}

Tersoff, J ^{[1
]}

Martel, R ^{[1
]}

Derycke, V ^{[1
]}

Appenzeller, J ^{[1
]}

Avouris, P ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICAL REVIEW LETTERS | 2002年 / 89卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.89.106801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that carbon nanotube transistors operate as unconventional "Schottky barrier transistors," in which transistor action occurs primarily by varying the contact resistance rather than the channel conductance. Transistor characteristics are calculated for both idealized and realistic geometries, and scaling behavior is demonstrated. Our results explain a variety of experimental observations, including the quite different effects of doping and adsorbed gases. The electrode geometry is shown to be crucial for good device performance.

引用

页数：4

共 15 条

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