Novel length scales in nanotube devices

被引:223
作者
Léonard, F [1 ]
Tersoff, J [1 ]
机构
[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Heights, NY 10598 USA
关键词
D O I
10.1103/PhysRevLett.83.5174
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We calculate the properties of p-n junctions, n-i junctions, and Schottky barriers made on a single-wall carbon nanotube. In contrast to planar bulk junctions, the depletion width for nanotubes varies exponentially with inverse doping. In addition, there is a very long-range (logarithmic) tail in the charge distribution, extending over the entire tube. These effects can render traditional devices unworkable, while opening new possibilities for device design. Our general conclusions should apply to a broad class of nanotube heterojunctions, and to other quasi-one-dimensional "molecular wire" devices.
引用
收藏
页码:5174 / 5177
页数:4
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