Smearing of phase transition due to a surface effect or a bulk inhomogeneity in ferroelectric nanostructures

被引:146
作者
Bratkovsky, AM
Levanyuk, AP
机构
[1] Hewlett Packard Labs, Palo Alto, CA 94304 USA
[2] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
关键词
D O I
10.1103/PhysRevLett.94.107601
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The boundary conditions, customarily used in the Landau-type approach to ferroelectric thin films and nanostructures, have to be modified to take into account that a surface of a ferroelectric is a defect of a field type. The surface (interface) field is coupled to a normal component of polarization and, as a result, the second order phase transitions are generally suppressed and anomalies in response are washed out, as observed experimentally.
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页数:4
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